Nitride based semiconductor laser device and method of...

Details Nitride based semiconductor laser device and method of... Nitride based semiconductor laser device and method of...

2005-02-01

2005-02-01

Jackson, Jerome (Department: 2815)

Coherent light generators

Particular active media

Semiconductor

C372S038050, C372S075000, C257S079000, C257S099000, C257S103000, C257S615000

Reexamination Certificate

active

06850547

ABSTRACT:
A semiconductor laser device is constructed by stacking an n-cladding layer, an n-optical guide layer, an MQW active layer, a p-cap layer, a p-optical guide layer, a p-cladding layer, an n-current blocking layer, and a p-contact layer in this order on one surface of a transparent substrate. A p electrode is formed on a predetermined region of the p-contact layer. An n electrode having a projected shape is formed on the other surface of the transparent substrate. In this case, a portion, where a projection of the n electrode is arranged, of the device corresponds to the front (a surface on the side of laser light emission) thereof.

REFERENCES:
patent: 5727008 (1998-03-01), Koga
patent: 5900647 (1999-05-01), Inoguchi
patent: 6177292 (2001-01-01), Hong et al.
patent: 6215803 (2001-04-01), Hata
patent: 6410939 (2002-06-01), Koide et al.
patent: 6-79172 (1994-11-01), None
patent: 11-284282 (1999-10-01), None

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