Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-01-04
2005-01-04
Picardat, Kevin M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S095000, C257S099000, C257S103000
Reexamination Certificate
active
06838703
ABSTRACT:
The nitride-based semiconductor laser device10has a stacked structure comprising a first contacting layer14, a first cladding layer16, an active layer20, a second cladding layer24, a second contacting layer26and a second electrode30which are consecutively stacked, the second cladding layer24comprises a lower layer24A and an upper layer24B, the first cladding layer14, the active layer20and the lower layer24A of the second cladding layer have a mesa structure, the upper layer24B of the second cladding layer and the second contacting layer26have a ridge structure, an insulating layer40covering at least part of each of both side surfaces of the upper layer24B of the second cladding layer is formed on the portions of the lower layer24A of the second cladding layer which portions correspond to the top surface of the mesa structure, and further, a metal layer42having substantially the same width as the mesa structure is formed on the top surface of the insulating layer40and the top surface of the second electrode30such that the metal layer42continues from one top surface to the other.
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Ansai Shinichi
Kijima Satoru
Kobayashi Takashi
Kobayashi Toshimasa
Tojo Tsuyoshi
Picardat Kevin M.
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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