Nitride-based semiconductor laser device

Details Nitride-based semiconductor laser device Nitride-based semiconductor laser device

2005-06-08

2008-11-18

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257SE33008

Reexamination Certificate

active

07453102

ABSTRACT:
A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer.

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Foreign Office Action: Reference No. NPA1030004, Dispatch No. 036135, Dispatch Date: Feb. 2, 2006, Patent Application No. 2003-025608, Drafting Date: Jan. 25, 2006, Examiner of JPO: Kazuyo Kadota 3412 2K00, Representative: Mr. Hirokazu Miyazano.
Shin-ichi Nagahara et al., “High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates”, Japanese Journal of Applied Physics, vol. 39, (2000), L647-650.
Japanese Office Action for Corresponding Application No. JP 2003-025608. Date of Dispatch Jul. 20, 2006.

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