Nitride-based semiconductor device with reduced leakage current

Details Nitride-based semiconductor device with reduced leakage current Nitride-based semiconductor device with reduced leakage current

2006-01-27

2010-06-29

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S189000, C257S190000, C257S615000

Reexamination Certificate

active

07745850

ABSTRACT:
A high electron mobility transistor is disclosed which has a triple-layered main semiconductor region formed on a silicon substrate via a multilayered buffer region. The multilayered buffer region is in the form of alternations of an aluminum nitride layer and a gallium nitride layer. Whilst the aluminum nitride layers are of n-like conductivity, the gallium nitride layers are doped into p-type conductivity, with the consequent creation of pn junctions between the two kinds of buffer layers. Another pn junction is formed between one p-type gallium nitride layer and the adjoining n-like electron transit layer included in the main semiconductor region. The pn junctions serve for reduction of current leakage.

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