Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2005-08-16
2010-06-15
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S012000, C257S013000, C257S094000, C257SE29069, C257SE29070, C257SE29071, C257SE29245
Reexamination Certificate
active
07737429
ABSTRACT:
Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicon substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.
REFERENCES:
patent: 6649287 (2003-11-01), Weeks, Jr. et al.
patent: 6692568 (2004-02-01), Cuomo et al.
patent: 2005/0067935 (2005-03-01), Lee et al.
patent: 2005/0179052 (2005-08-01), Yi et al.
patent: 11-186178 (1999-07-01), None
patent: 2002-164521 (2002-06-01), None
patent: 2003-22973 (2003-01-01), None
patent: 2003-243316 (2003-08-01), None
patent: 2004-515074 (2004-05-01), None
patent: 2004-289095 (2004-10-01), None
patent: 2006-511075 (2006-03-01), None
patent: WO 02/45140 (2002-06-01), None
patent: WO 2004/057663 (2004-07-01), None
United States Office Action issued in U.S. Appl. No. 12/497,060 dated Dec. 29, 2009.
Jang Sung Hwan
Kim Min Ho
Koike Masayoshi
Lee Seong Suk
Min Kyeong Ik
Gebremariam Samuel A
Gurley Lynne A
McDermott Will & Emery LLP
Samsung Electro-Mechanics Co. Ltd.
LandOfFree
Nitride based semiconductor device using nanorods and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nitride based semiconductor device using nanorods and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nitride based semiconductor device using nanorods and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4203893