Nitride based semiconductor device using nanorods and...

Details Nitride based semiconductor device using nanorods and... Nitride based semiconductor device using nanorods and...

2011-07-19

2011-07-19

Gebremariam, Samuel A (Department: 2811)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S022000

Reexamination Certificate

active

07981714

ABSTRACT:
Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

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Japanese Office Action, with English translation thereof, issued in Patent Application No. JP 2005-238359 dated on Jul. 1, 2008.

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