Nitride-based semiconductor device of reduced current leakage

Details Nitride-based semiconductor device of reduced current leakage Nitride-based semiconductor device of reduced current leakage

2006-02-17

2009-02-17

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

C257S192000, C257S194000, C438S039000, C438S040000

Reexamination Certificate

active

07491983

ABSTRACT:
A high electron mobility transistor is disclosed which has a double-layered main semiconductor region formed on a silicon substrate via a multilayered buffer region. The multilayered buffer region is in the form of alternations of an aluminum nitride layer and a gallium nitride layer. The main semiconductor region, buffer region, and part of the substrate taper as they extend away from the rest of the substrate, providing slanting side surfaces. An electroconductive antileakage overlay covers these side surfaces via an electrically insulating overlay. Electrically coupled to the silicon substrate via a contact electrode, the antileakage overlay serves for reduction of current leakage along the side surfaces.

REFERENCES:
patent: 7033854 (2006-04-01), Morita
patent: 2005/0161704 (2005-07-01), Hoshi et al.
patent: 0124256 (1984-03-01), None
patent: 59-177970 (1984-10-01), None
patent: 2003-059948 (2003-02-01), None

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