Nitride-based semiconductor device and method of fabricating...

Details Nitride-based semiconductor device and method of fabricating... Nitride-based semiconductor device and method of fabricating...

2005-04-26

2010-02-02

Nguyen, Thinh T (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S704000, C438S706000, C438S660000, C257S103000, C257SE33025, C257SE21006

Reexamination Certificate

active

07655484

ABSTRACT:
A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

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