Nitride-based semiconductor device and method of fabricating...

Details Nitride-based semiconductor device and method of fabricating... Nitride-based semiconductor device and method of fabricating...

2008-06-16

2009-12-08

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S079000, C257S081000, C257SE33062

Reexamination Certificate

active

07629623

ABSTRACT:
A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

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