Nitride-based semiconductor device and method of fabricating...

Details Nitride-based semiconductor device and method of fabricating... Nitride-based semiconductor device and method of fabricating...

2005-05-10

2005-05-10

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S022000, C438S706000

Reexamination Certificate

active

06890779

ABSTRACT:
A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

REFERENCES:
patent: 5493577 (1996-02-01), Choquette et al.
patent: 6242761 (2001-06-01), Fujimoto et al.
patent: 6399966 (2002-06-01), Tsuda et al.
patent: 6455340 (2002-09-01), Chua et al.
patent: 6515308 (2003-02-01), Kneissl et al.
patent: 09-129930 (1997-05-01), None
patent: P2002-26438 (2002-01-01), None

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