Nitride-based semiconductor device and manufacturing method...

Details Nitride-based semiconductor device and manufacturing method... Nitride-based semiconductor device and manufacturing method...

2005-03-29

2005-03-29

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S257000, C257S079000, C257S099000, C257S613000, C257S615000, C257S103000, C438S040000, C438S045000, C438S504000, C438S506000

Reexamination Certificate

active

06872967

ABSTRACT:
In the manufacture of a semiconductor laser device, sequentially grown on a sapphire substrate in the following order are a buffer layer, a first undoped GaN layer, a first super lattice defect reducing layer, a second undoped GaN layer, a second super lattice defect reducing layer, a third undoped GaN layer, a third super lattice defect reducing layer and a fourth undoped GaN layer. A device structure is then formed thereon. The first to third super lattice defect reducing layers each include five pairs of InGaN and AlGaN films alternately placed on one another in this order.

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Notification of Reason for Refusal in counterpart JP 2000-084592 dated Jan. 6, 2004 and translation.
Jpn. J. Appl. Phys. vol. 39, pp. L197-L199 Part 2, No. 3 A/B Mar. 15, 2000.
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Japanese Journal of Applied Physics vol. 26, No. 7, pp. L1141-L1143 Jul. 1987.

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