Nitride-based semiconductor device

Details Nitride-based semiconductor device Nitride-based semiconductor device

2006-11-29

2008-11-11

Landau, Matthew C. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Avalanche diode

C257SE31084, C257SE29327, C257SE21053, C257SE21352

Reexamination Certificate

active

07449730

ABSTRACT:
A nitride-based semiconductor device includes a diode provided on a semiconductor substrate. The diode contains a first nitride-based semiconductor layer made of non-doped AlXGa1-XN (0≦X<1); a second nitride-based semiconductor layer made of non-doped or n-type AlYGa1-YN (0<Y≦1, X<Y) having a lattice constant smaller than that of the first nitride-based semiconductor layer; a first electrode formed on the second nitride-based semiconductor layer; a second electrode formed on the second nitride-based semiconductor layer; and an insulating film that covers the second nitride-based semiconductor layer below a peripheral portion of the first electrode. In the diode, a recess structure portion is formed at a position near the peripheral portion of the first electrode on the second nitride-based semiconductor layer, and the first electrode covers the second nitride-based semiconductor layer and at least a part of the insulating film.

REFERENCES:
patent: 6982204 (2006-01-01), Saxler et al.
patent: 2006/0108659 (2006-05-01), Yanagihara et al.
patent: 2003-229566 (2003-08-01), None
patent: 2004-31896 (2004-01-01), None
U.S. Appl. No. 11/506,776, filed Aug. 21, 2006, Masahiko Kuraguchi.
J. P. Ibbetson, et al., “Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors”, Applied Physics Letters, vol. 77, No. 2, Jul. 10, 2000, pp. 250-252.

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