Nitride based semiconductor device

Details Nitride based semiconductor device Nitride based semiconductor device

2006-08-01

2006-08-01

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S014000

Reexamination Certificate

active

07084420

ABSTRACT:
The present invention provides a nitride based semiconductor device comprising an active layer having a quantum well layer and a quantum barrier layer, wherein the device includes an electron emitting layer formed of at least two repeats of a first nitride semiconductor layer and a second nitride semiconductor layer having different compositions between a n-type nitride semiconductor layer and the active layer, the first nitride semiconductor layer has an energy band gap greater than that of the quantum well layer, smaller than that of the quantum barrier layer, and decreasing closer to the active layer, and the second nitride semiconductor layer has an energy band gap at least higher than that of the adjacent first nitride semiconductor layer(s) and has a thickness capable of tunneling electrons.

REFERENCES:
patent: 6337493 (2002-01-01), Tanizawa et al.
patent: 6737684 (2004-05-01), Takagi et al.
Chen, C. H., Y. K. Su, S. J. Chang, G. C. Chi, J. K. Sheu, J. F. Chen, C. H. Liu, and Y. H. Liaw, IEEE Electron Device Letters, “High Brightness Green Light Emitting Diodes With Charge Asymmetric Resonance Tunneling Structure”, vol. 23, No. 3 (Mar. 2002), pp. 130-132.

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