Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-05-30
2006-05-30
Packer, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S096000, C257S196000, C257S015000
Reexamination Certificate
active
07053418
ABSTRACT:
The present invention provides a nitride semiconductor device comprising an active layer of a quantum well structure, a first conductive clad layer and a second conductive clad layer. The first conductive clad layer is made of the quaternary nitride semiconductor InAlGaN having a lattice constant equal to or larger than that of the active layer and includes a first nitride semiconductor layer having an energy band gap larger than that of the active layer, a second nitride semiconductor layer having an energy band gap smaller than that of the first nitride semiconductor layer and a third nitride semiconductor layer having an energy band gap larger than that of the second nitride semiconductor layer, sequentially closer to the active layer.
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Publication: Applied Physics Letters vol. 73, No. 8, Aug. 24, 1998, p. 1128-1130 Title: Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells Author: Yong-Hoon Cho, J.J. Song, S. Keller, M.S. Minsky, E. Hu, U. K. Mishara, and S. P. DenBaars.
Publication: H. Protzmann et al. : Interface Treatment of GaN/InGaN-Multi QW Structures (1999) p. 649-654 Title: Interface Treatment of GaN/InGaN-Multi Quantum Well Structures Grown in Production Type MOVPE Systems Author: H. Protzmann, M. Lunenburger, J. Blasing, A. Krost, M. Heuken, and H. Jurgensen.
Kim Je Won
Kim Sun Woo
Oh Jeong Tak
Landau Matthew C
Lowe Hauptman & Berner LLP
Packer Kenneth
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