Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-08-30
2005-08-30
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S017000, C257S096000, C257S101000, C257S103000
Reexamination Certificate
active
06936838
ABSTRACT:
Disclosed is a nitride-based semiconductor device including a first nitride semiconductor layer doped with an n type impurity, an active layer formed on the first nitride semiconductor layer, the active layer including a plurality of quantum well layers and a plurality of quantum barrier layers alternately laminated over one another, at least one of the quantum layers being doped with the n type impurity, and a nitride semiconductor layer formed over the active layer, and doped with a p type impurity. The quantum barrier layer doped with the n type impurity includes an internal layer portion doped with the n type impurity, and an anti-diffusion film arranged at an interface of the quantum barrier layer with an adjacent one of the quantum well layers, the anti-diffusion film having an n type impurity concentration lower than that of the internal layer portion.
REFERENCES:
patent: 2002/0155712 (2002-10-01), Urashima et al.
patent: 2004/0161006 (2004-08-01), Chang et al.
patent: WO 00/76004 (2000-12-01), None
“Spiral Growth of IngaN Nanoscale Islands on GaN” by Keller et al.; Japanese Journal of Applied Physics, vol. 37, pp. L431-434, c. 1998.
Ho Tu-Tu
Lowe Hauptman & Berner LLP
Nelms David
Samsung Electro-Mechanics Co. Ltd.
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