Nitride-based semiconductor device

Details Nitride-based semiconductor device Nitride-based semiconductor device

2008-07-15

2008-07-15

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S096000, C257S103000, C257S190000, C257SE21127

Reexamination Certificate

active

07400000

ABSTRACT:
A light-emitting diode is built on a silicon substrate doped with a p-type impurity to possess sufficient conductivity to provide a current path. The p-type silicon substrate has epitaxially grown thereon two superposed buffer layers of aluminum nitride and n-type indium gallium nitride. Further grown epitaxially on the buffer layers is the main semiconductor region of the LED which comprises a lower confining layer of n-type gallium nitride, an active layer for generating light, and an upper confining layer of p-type gallium nitride. In the course of the growth of the main semiconductor region there occurs a thermal diffusion of aluminum, gallium and indium from the buffer layers into the p-type silicon substrate, with the consequent creation of an alloy layer of the diffused metals. Representing p-type impurities in the p-type silicon substrate, these metals do not create a pn junction in the substrate which causes a forward voltage drop.

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Wu, Wang-C. et al., “Effect of Rapid Thermal Annealing on Radio-Frequency Magnetron-Sputtered GaN Thin Films and Au/GaN Schottky Diodes”,J. Vac. Sci. Technol. B,Jul./Aug. 1999, 17(4), 1545-1548.

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