Nitride-based light emitting devices and methods of...

Details Nitride-based light emitting devices and methods of... Nitride-based light emitting devices and methods of...

2011-03-22

2011-03-22

Meeks, Timothy H (Department: 1715)

Coating processes

Electrical product produced

C427S335000, C216S024000, C216S056000, C216S075000

Reexamination Certificate

active

07910154

ABSTRACT:
A light emitting device may include an n-clad layer formed on a crystalline wafer; a porous layer formed by processing the n-clad layer in a mixed gas atmosphere of HCl and NH3. The light emitting device may further include an active layer and a p-clad layer formed on the porous layer.

REFERENCES:
patent: 2005/0161772 (2005-07-01), Suzuki
patent: 2005/0167693 (2005-08-01), Goetz et al.
patent: 2005/0176257 (2005-08-01), Uesawa
patent: 11-220169 (1999-08-01), None
patent: 2002-261075 (2002-09-01), None
Office Action dated Aug. 14, 2009 for corresponding Chinese Patent Application No. 200610081818.6.

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