Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2007-10-16
2009-02-10
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S022000, C438S046000, C438S048000, C257S079000, C257S094000, C257S099000, C257SE21292, C257SE21294
Reexamination Certificate
active
07488613
ABSTRACT:
A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.
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Hata Masayuki
Hiroyama Ryoji
Kunisato Tatsuya
Oota Kiyoshi
McDermott Will & Emery LLP
Nguyen Dao H
Sanyo Electric Co,. Ltd.
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