Nitride-based light-emitting device and method of...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor

Reexamination Certificate

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C438S022000, C438S046000, C438S048000, C257S079000, C257S094000, C257S099000, C257SE21292, C257SE21294

Reexamination Certificate

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07488613

ABSTRACT:
A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.

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