Nitride-based light-emitting device

Details Nitride-based light-emitting device Nitride-based light-emitting device

2011-04-19

2011-04-19

Graybill, David E (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257SE33008, C257SE33072

Reexamination Certificate

active

07928424

ABSTRACT:
A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.

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