Nitride-based laser diode with GaN waveguide/cladding layer

Details Nitride-based laser diode with GaN waveguide/cladding layer Nitride-based laser diode with GaN waveguide/cladding layer

2006-10-17

2006-10-17

Minsun, Harvey (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C257S096000

Reexamination Certificate

active

07123637

ABSTRACT:
A nitride-based laser diode structure utilizing a single GaN:Mg waveguide/cladding layer, in place of separate GaN:Mg waveguide and AlGaN:Mg cladding layers used in conventional nitride-based laser diode structures. When formed using an optimal thickness, the GaN:Mg layer produces an optical confinement that is comparable to or better than conventional structures. A thin AlGaN tunnel barrier layer is provided between the multiple quantum well and a lower portion of the GaN:Mg waveguide layer, which suppresses electron leakage without any significant decrease in optical confinement. A split-metal electrode is formed on the GaN:Mg upper waveguide structure to avoid absorption losses in the upper electrode metal. A pair of AlGaN:Si current blocking layer sections are located below the split-metal electrode sections, and separated by a gap located over the active region of the multiple quantum well.

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