Nitride-based heterostructure devices

Details Nitride-based heterostructure devices Nitride-based heterostructure devices

2004-01-30

2008-03-25

Dickey, Thomas (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S183000, C257SE21126, C257SE29081

Reexamination Certificate

active

07348606

ABSTRACT:
A method of producing nitride based heterostructure devices by using a quaternary layer comprised of AlInGaN. The quaternary layer may be used in conjunction with a ternary layer in varying thicknesses and compositions that independently adjust polarization charges and band offsets for device structure optimization by using strain compensation profiles. The profiles can be adjusted by altering profiles of molar fractions of In and Al.

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