Nitride based hetero-junction field effect transistor

Details Nitride based hetero-junction field effect transistor Nitride based hetero-junction field effect transistor

2008-07-15

2008-07-15

Landau, Matthew C (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000, C257SE29246, C257SE29252, C257SE29253

Reexamination Certificate

active

07400001

ABSTRACT:
A nitride based hetero-junction field effect transistor includes a high resistance nitride semiconductor layer formed on a substrate, an Al-doped GaN layer formed on the high resistance nitride semiconductor layer and having an Al content of 0.1˜1%, an undoped GaN layer formed on the Al-doped GaN layer, and an AlGaN layer formed on the undoped GaN layer such that a two-dimensional electron gas (2DEG) layer is formed at an interface of the undoped GaN layer.

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