Nitride-based compound semiconductor light-emitting element...

Details Nitride-based compound semiconductor light-emitting element... Nitride-based compound semiconductor light-emitting element...

2005-08-30

2005-08-30

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S081000

Reexamination Certificate

active

06936861

ABSTRACT:
A nitride-based compound semiconductor light-emitting element of the present invention includes: a P-type electrode; a P-type nitride-based compound semiconductor layer disposed on the P-type electrode; a light-emitting layer disposed on the P-type nitride-based compound semiconductor layer and emitting light; a nitride-based compound semiconductor layer disposed on the light-emitting layer and transmitting light emitted by the light-emitting layer therethrough; a buffer layer disposed on the nitride-based compound semiconductor layer and transmitting the light therethrough, wherein the buffer layer is made of a nitride-based compound semiconductor material and a trench is formed in the buffer layer so as to expose portions of the nitride-based compound semiconductor layer; and an N-type electrode disposed so as to cover the trench and electrically connected to the nitride-based compound semiconductor layer.

REFERENCES:
patent: 5959401 (1999-09-01), Asami et al.
patent: 6225648 (2001-05-01), Hsieh et al.
patent: 11-177142 (1999-07-01), None

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