Nitride based compound semiconductor light emitting device and m

Details Nitride based compound semiconductor light emitting device and m Nitride based compound semiconductor light emitting device and m

1997-09-25

1999-10-26

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Mesa formation

438460, 372 45, 372 50, H01L 2100, H01L 21301, H01L 2146, H01L 2178

Patent

active

059727306

ABSTRACT:
A wedge-like etching groove is formed so that stresses can be collected along a cleavage surface of a nitride based compound semiconductor, and end portions are separated from a substrate. With these operations, a light-emitting layer can form an excellent mirror by a natural cleavage. Further, by separating a portion of the end surfaces from the substrate, it is possible to suppress a deformation from the substrate and therefore, a deterioration due to the deformation can be prevented. Therefore, it is possible to provide a nitride based compound semiconductor light-emitting device which can form an excellent cleavage surface with a simple process.

REFERENCES:
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patent: 5604763 (1997-02-01), Kato et al.
patent: 5753966 (1998-05-01), Morita et al.
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 5804839 (1998-09-01), Hanaoka et al.
B. Groussin, et al., Laser Diode Technology and Application V, SPIE vol. 1850, p. 330, "1000W QCW Output Power from Surface Emitting GaAs/AIGaAs Laser Diodes Arrays", 1993.

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