Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-09-01
2009-06-30
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S013000, C257S080000, C257S085000, C257S089000, C257S100000, C257S101000, C257S103000, C257SE51018, C257SE51022, C257SE33001, C257SE33077, C257SE33054, C257SE25032, C257SE25028
Reexamination Certificate
active
07554124
ABSTRACT:
A nitride-based compound semiconductor light emitting device includes a first conductive substrate, a first ohmic electrode formed on the first conductive substrate, a bonding metal layer formed on the first ohmic electrode, a second ohmic electrode formed on the bonding metal layer, and a nitride-based compound semiconductor layer formed on the second ohmic electrode. The nitride-based compound semiconductor layer includes at least a P-type layer, a light emitting layer and an N-type layer, and has a concave groove portion or a concave-shaped portion.
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Armand Marc
Morrison & Foerster / LLP
Pizarro Marcos D.
Sharp Kabushiki Kaisha
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