Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2005-07-08
2008-10-21
Landau, Matthew C (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S079000, C257S099000, C257SE33068, C257SE33075
Reexamination Certificate
active
07439551
ABSTRACT:
The nitride-based compound semiconductor light emitting device includes a first ohmic electrode, a bonding metal layer, a second ohmic electrode, a nitride-based compound semiconductor layer, and a transparent electrode stacked in this order on a support substrate, and further includes an ohmic electrode formed on a back side of the support substrate.
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Landau Matthew C
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
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