Nitridation of titanium-tungsten interconnects

Details Nitridation of titanium-tungsten interconnects Nitridation of titanium-tungsten interconnects

1993-01-22

1994-06-07

Quach, T. N.

Fishing, trapping, and vermin destroying

437190, 437195, 437200, 257764, H01L 21283

Patent

active

053189248

ABSTRACT:
A method of forming interconnects for submicron integrated circuits that allows use of titanium-tungsten as the interconnect material. The inherent instability of titanium-tungsten to oxidation is addressed by a nitridation process that includes exposing the interconnect to an ambient containing nitrogen (NH.sub.3) at an elevated temperature. Typically, the process is a rapid thermal anneal. A local interconnect may be formed, whereafter an insulating layer can be deposited at a high temperature without causing oxidation within the local interconnect that would adversely affect the resistivity of the material.

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