Nitridation of STI liner oxide for modulating inverse width...

Details Nitridation of STI liner oxide for modulating inverse width... Nitridation of STI liner oxide for modulating inverse width...

2007-04-03

2007-04-03

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S425000, C438S435000, C257SE21547

Reexamination Certificate

active

11103104

ABSTRACT:
A method (1300) of forming a semiconductor device comprising an isolation structure is disclosed, and includes forming a trench region within a semiconductor body (1308). Then, surfaces of the trench region are nitrided (1310) via a nitridation process. An oxidation process is performed that combines with the nitrided surfaces (1312) to form a nitrogen containing liner. Subsequently, the trench region is filled with dielectric material (1316) and then planarized (1318) to remove excess dielectric fill material.

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