Fishing – trapping – and vermin destroying
Patent
1994-06-17
1995-11-21
Fourson, George
Fishing, trapping, and vermin destroying
437 26, 437 27, 437 62, H01L 2176
Patent
active
054686571
ABSTRACT:
A method is provided for improving the electrical isolation between surface regions and underlying support regions in SIMOX buried oxide wafers. The method implants nitrogen ions into a wafer to approximately the same depth as oxygen ions are implanted during SIMOX processing. A subsequent heating step causes the nitrogen ions to migrate to the interface region between the buried oxide and the upper and lower semiconductor regions of the substrate. The nitrogen passivates the interface regions to reduce the presence of buried free electrons trapped in the substrate. Nitrogen implantation can be performed before, during, or after the oxygen is implanted. Nitrogen ions can also be implanted after the SIMOX buried silicon dioxide layer has been formed. If the latter alternative is followed, the wafer must be subsequently heated to migrate the nitrogen ions to the interface regions within the substrate. Such subsequent heating can be performed as part of the formation of devices on the substrate. The resultant nitrogen passivated SIMOX substrate has improved electrical isolation between surface active devices and the supporting substrate. The invention also yields a substantial increase in the breakdown voltage of the buried oxide layer.
REFERENCES:
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patent: 4786608 (1988-11-01), Griffith
patent: 4948742 (1990-08-01), Nishimura et al.
patent: 4968636 (1990-11-01), Sugawara
patent: 5266502 (1993-11-01), Okada et al.
patent: 5278077 (1994-01-01), Nakato
Fourson George
Ripma David C.
Sharp Kabushiki Kaisha
Sharp Microelectronics Technology Inc.
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