Nickel silicide with reduced interface roughness

Details Nickel silicide with reduced interface roughness Nickel silicide with reduced interface roughness

2005-03-29

2005-03-29

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S413000, C257S755000, C257S766000, C438S592000

Reexamination Certificate

active

06873051

ABSTRACT:
Nickel silicide formation with significantly reduced interface roughness is achieved by forming a diffusion modulating layer between the underlying silicon and nickel silicide layers. Embodiments include ion implanting nitrogen into the substrate and gate electrode, depositing a thin layer of titanium or tantalum, depositing a layer of nickel, and then heating to form a diffusion modulating layer containing nitrogen at the interface between the underlying silicon and nickel silicide layers.

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