Nickel silicide with reduced interface roughness

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S413000, C257S755000, C257S766000, C438S592000

Reexamination Certificate

active

06873051

ABSTRACT:
Nickel silicide formation with significantly reduced interface roughness is achieved by forming a diffusion modulating layer between the underlying silicon and nickel silicide layers. Embodiments include ion implanting nitrogen into the substrate and gate electrode, depositing a thin layer of titanium or tantalum, depositing a layer of nickel, and then heating to form a diffusion modulating layer containing nitrogen at the interface between the underlying silicon and nickel silicide layers.

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Tadashi et al., “A New Contract Plug Technique For Deep-Submicrometer ULSI's employing Selective Nickel Silicidation of Polysilicon With a Titanium Nitride Stopper”, IEEE Transactions on Electron Devices, Feb. 1993, pp. 271-377, XP000335344 abstract.

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