Nickel-palladium Schottky junction in a cavity

Details Nickel-palladium Schottky junction in a cavity Nickel-palladium Schottky junction in a cavity

1978-05-24

1980-09-16

Clawson, Jr., Joseph E.

357 55, 357 71, H01L 2948

Patent

active

042233275

ABSTRACT:
A Schottky barrier semiconductor device comprising a semiconductor substrate having a hole in part of one of its main surfaces, a surface protecting film formed on the main surface and having a flange-like part extending over the edge of the hole, and a barrier metal formed on the entire wall of the hole including areas underneath the flange-like portion. The barrier metal film thus formed prevents concentration of an electric field at the edge of the interface between the barrier metal and the semiconductor substrate, thereby improving the reverse breakdown characteristics.

REFERENCES:
patent: 3349297 (1967-10-01), Crowell et al.
patent: 3636417 (1972-01-01), Kimura
patent: 3746950 (1973-07-01), Kano et al.
patent: 3764865 (1973-10-01), Napoli et al.
patent: 3777228 (1973-12-01), Van Steenbergen et al.
patent: 3999281 (1976-12-01), Goronicin et al.
L. Esaki et al., "Schottky Diode," IBM Tech. Discl. Bull., vol. 11, #1, Jun. 1968, p. 19.
S. Magdo et al., "High-Speed EPI Field-Effect Devices," IBM Tech. Discl. Bull., vol. 14, #3, Aug. 1971, p. 751.
L. Freed et al., "Personalization . . . by Metallic Plugs," IBM Tech. Discl. Bull., vol. 15, #12, May 1973, pp. 3875-3896.

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