Nickel-manganese as a pinning layer in spin valve/GMR magnetic s

Details Nickel-manganese as a pinning layer in spin valve/GMR magnetic s Nickel-manganese as a pinning layer in spin valve/GMR magnetic s

1996-05-16

1998-06-09

Snow, Walter E.

Electricity: measuring and testing

Magnetic

Magnetometers

338 32R, 360113, G01R 3302, H01L 4308, G11B 5227, G11B 533

Patent

active

057640564

ABSTRACT:
A spin valve sensor and a method of fabricating the same are disclosed. The spin valve sensor includes a first layer of ferromagnetic material and a second layer of ferromagnetic material, with the second layer of ferromagnetic material having a thickness of less than about 100 .ANG.. A first layer of non-ferromagnetic conducting material is positioned between the first and second layers of ferromagnetic material. A NiMn pinning layer is positioned adjacent to the second layer of ferromagnetic material such that the pinning layer is in contact with the second layer of ferromagnetic material, wherein the NiMn pinning layer has a thickness of less than about 200 .ANG. and provides a pinning field for pinning a magnetization of the second layer of ferromagnetic material in a first direction.

REFERENCES:
patent: 4949039 (1990-08-01), Grunberg
patent: 5315468 (1994-05-01), Lin et al.
patent: 5422571 (1995-06-01), Gurney et al.
Devasahayam et al., "Exchange Biasing with NiMn," NSIC Meeting, Dec. 12, 1995.
Devasahayam et al., "Domain Stabilization With MR Heads," NSIC Heads Program Monthly Report, Feb. 14, 1996.
Devasahayam et al., "Exchange Biasing with NiMn," DSSC Spring '96 Review, Carnegie Mellon University.
Lin et al., "Improved Exchange Coupling Between Ferromagnetic Ni-Fe and Antiferromagnetic Ni-Mn-based Films," Appl. Phys. Lett., vol. 65, No. 9, pp. 1183-1185, 29 Aug. 1994.

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