Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-06-27
2006-06-27
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S766000
Reexamination Certificate
active
07067924
ABSTRACT:
A method for forming a nickel cap layer over copper metalized bond pad is disclosed in which the phosphorous content of the nickel cap, and particularly the surface of the nickel cap, may be controlled. The phosphorous content of the surface of the nickel cap is suitably determined such that oxidation is inhibited. The resulting nickel cap may be wire-bonded directly, without the deposition of a gold cap layer.
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patent: 3599060 (1971-08-01), Triggs et al.
patent: 5869126 (1999-02-01), Kukanskis
patent: 6259161 (2001-07-01), Wu et al.
patent: 6593221 (2003-07-01), Lindgren
patent: 6781234 (2004-08-01), Hayashida
patent: 2004/0186008 (2004-09-01), Inoue et al.
Donald W. Baudrand, Use of Electroless Nickel To Reduce Gold Requirements, Plating and Surfacing Finishing, pp. 57-60, (Dec. 1981).
Gleason Jeffery N.
Lindgren Joseph T.
Wilson Allan R.
Yoder Fletcher
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