Patent
1989-05-01
1990-11-13
Hille, Rolf
357 70, H01L 2354, H01L 2352
Patent
active
049705695
ABSTRACT:
A nickel based material for a semiconductor apparatus is provided which includes between 0.5 and 5% of at least one material selected from the group consisting of cobalt, iron, aluminum, manganese, silicon, carbon, and copper; residual nickel; and unavoidable impurties. With this nickel based material, electrical conductivity thereof can be maintained within a proper value and the plate film adhesion in silver plating nickel based products can be improved remarkably and both heat dissipation capacity and the coefficient of thermal expansion can be improved.
REFERENCES:
patent: 3217401 (1965-11-01), White
patent: 4498121 (1985-02-01), Breedis et al.
patent: 4607276 (1986-08-01), Butt
"Mitsubishi Metal Products Catalog", Mitsubishi Denki Kabushiki Kaisha, Catalog Number P-C2000-AsA8512, Dec. 1985.
Betteridge, W., "Nickel and Its Alloys", Chichester, England, Ellis Horwood Ltd., 1984, pp. 63, 64.
Kubosono Kenji
Mori Toshihiko
Clark S. V.
Hille Rolf
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Nickel based material for a semiconductor apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nickel based material for a semiconductor apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nickel based material for a semiconductor apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-780169