Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Solder wettable contact – lead – or bond
Reexamination Certificate
2004-10-14
2009-10-20
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Solder wettable contact, lead, or bond
C257SE23015
Reexamination Certificate
active
07605481
ABSTRACT:
The present invention relates to a nickel alloy sputtering target comprising 1 to 30 at % of Cu; 2 to 25 at % of at least one element selected from among V, Cr, Al, Si, Ti and Mo; remnant Ni and unavoidable impurities so as to inhibit the Sn diffusion between a solder bump and a substrate layer or a pad. Provided are a nickel alloy sputtering target and a nickel alloy thin film for forming a barrier layer having excellent wettability with the Pb-free Sn solder or Sn—Pb solder bump, and capable of inhibiting the diffusion of Sn being a soldering component and effectively preventing the reaction with the substrate layer upon forming a Pb-free Sn solder or Sn—Pb solder bump on a substrate such as a semiconductor wafer or electronic circuit or a substrate layer or pad of the wiring or electrode formed thereon.
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Suzuki Ryo
Yamakoshi Yasuhiro
Howson & Howson LLP
Monbleau Davienne
Nippon Mining & Metals Co., Ltd.
Trinh Hoa B
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