Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-07-18
2006-07-18
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S347000
Reexamination Certificate
active
07078722
ABSTRACT:
A field effect transistor and method of fabricating the field effect transistor. The field effect transistor, including: a gate electrode formed on a top surface of a gate dielectric layer, the gate dielectric layer on a top surface of a single-crystal silicon channel region, the single-crystal silicon channel region on a top surface of a Ge including layer, the Ge including layer on a top surface of a single-crystal silicon substrate, the Ge including layer between a first dielectric layer and a second dielectric layer on the top surface of the single-crystal silicon substrate.
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Anderson Brent A.
Lanzerotti Louis D.
Nowak Edward J.
Dickey Thomas L.
International Business Machines - Corporation
Sabo William D.
Schmeiser Olsen & Watts
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