Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-01-24
2006-01-24
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S773000, C257S758000
Reexamination Certificate
active
06989603
ABSTRACT:
The low-cost lithography disclosed in the present invention is based on two approaches: 1. Use a low-precision nF-opening mask to implement high-precision opening-related patterns (e.g. inter-level connections and segmented-lines); 2. Improve the mask re-usability with programmable litho-system and/or logic litho-system. Pattern distribution enables the mask-repair through redundancy. It further enables highly-corrected masks, which provide higher-order correction to clear patterns on wafer.
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