Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1996-08-29
1999-05-18
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 19, 117 20, 117935, C30B15/02;29/06
Patent
active
059047674
ABSTRACT:
A working recipe for NTD CZ and MCZ silicon wafer production is provided. It teaches that a neutron-enhanced S-curve can be constructed by noting that a silicon interstitial (Si.sub.I), emitted due to volume change during the traditional oxygen precipitation, can join a neutron-created vacancy in facilitating further oxygen loss via precipitation. The former relation is: 2Si+2O.sub.I .fwdarw.SiO.sub.2 +Si.sub.i the latter is: vacancy+Si .sub.I +2O.sub.I .fwdarw.SiO ..sub.2 The total loss of oxygen interstitials is:
with subscripts 0 and s standing for initial state and S-curve prediction, function of the cadmium ratio (CR), silicon sample thickness, and total effectiveness of the recipe taught by the present invention is provided in the form of characterization results derived from MOS capacitors and PN junctions built upon wafers produced according to the recipe. These show that the nominal minority carrier lifetime, interface density, and leakage currents under reverse bias are the same as those from a blank prime wafer.
REFERENCES:
patent: 4910156 (1990-03-01), Takasu et al.
patent: 5212100 (1993-05-01), Groves et al.
Ackerman Stephen B.
Industrial Technology Research Institute
Kunemund Robert
Saile George O.
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