Neutron transmutation doping of a silicon wafer

Details Neutron transmutation doping of a silicon wafer Neutron transmutation doping of a silicon wafer

1987-12-22

1990-03-20

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 16, 437 15, 357 91, 148DIG165, 376158, 376183, 376156, H01L 2100, H01L 2102, H01L 2126, H01L 21263

Patent

active

049101560

ABSTRACT:
A silicon wafer and a method of producing a silicon wafer comprising a phosphor-doping method of doping phosphor into a single silicon crystals by transmuting isotope Si.sup.30 contained in said single silicon crystals made by the CZ method or the MCZ method into p.sup.31 under neutron irradiation to said single silicon crystals.

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Prussin, S., Application of Neutron Transmutation Doping for Production of Homogeneous Epitaxial Layers, J. Electrochem. Soc., Feb. 1978, pp. 350-352.
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