Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to corpuscular radiation
Reexamination Certificate
2008-12-19
2010-11-23
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to corpuscular radiation
C438S057000, C438S059000, C438S062000, C257SE21422, C257SE21575, C257SE31131
Reexamination Certificate
active
07838324
ABSTRACT:
A method of fabricating a neutron detection structure includes temporarily bonding a carrier to a passivated SOI SRAM wafer, removing a first substrate, depositing a conversion layer where at least a portion of the first substrate was removed, permanently bonding a second substrate to the conversion layer, removing the carrier, and providing at least one electrical contact to the device layer. A method of fabricating a neutron detection structure, corresponding to an alternate embodiment, includes temporarily bonding a carrier to a passivated SOI SRAM wafer, removing a first substrate, depositing a conversion layer onto a second substrate, permanently bonding the coated substrate where at least a portion of the first substrate was removed, removing the carrier, and providing at least one electrical contact to the device layer.
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Honeywell International , Inc.
Lebentritt Michael S
Shumaker & Sieffert P.A.
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