Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Reexamination Certificate
2007-09-18
2007-09-18
Porta, David (Department: 2884)
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
C257S252000
Reexamination Certificate
active
10693847
ABSTRACT:
A neutron detection device includes a neutron conversion layer in close proximity to an active semiconductor layer. The device is preferably based on the modification of existing conventional semiconductor memory devices. The device employs a conventional SRAM memory device that includes an SOI substrate. The SOI substrate includes an active semiconductor device layer, a base substrate and an insulating layer between the active semiconductor device layer and the base substrate. The base substrate layer is removed from the memory device by lapping, grinding and/or etching to expose the insulating layer. A neutron conversion layer is then formed on the insulating layer. The close proximity of the neutron conversion layer to the active semiconductor device layer yields substantial improvements in device sensitivity.
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August Robert A.
Hughes Harold L.
McMarr Patrick J.
Whitlock Robert R.
Karasek John J.
Malevic Djura
Porta David
Ressing Amy
United States of America as represented by the Secretary of the
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