Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Patent
1997-08-22
2000-06-13
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
25037005, H01L 2714
Patent
active
060752610
ABSTRACT:
A neutron detecting semiconductor device and process for fabricating the same is provided. In one particular embodiment, a semiconductor device for detecting neutrons is formed by forming one or more memory cells on a substrate and forming a neutron-reactant material over the one or more memory cells. Upon reacting with a neutron, the neutron-reactant material emits one or more particles capable of inducing a state change in the one or more memory cells. The neutron-reactant material may be formed from a borophosphosilicate glass (BPSG) having a relatively high concentration of .sup.10 Boron. For example, the concentration .sup.10 Boron may range from 80 to 100 percent or 95 to 100 percent of the total Boron concentration in the BPSG material.
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patent: 5019886 (1991-05-01), Sato et al.
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patent: 5331164 (1994-07-01), Buehler et al.
Fitzsimmons et al., "Test of a Boron-Phosphide Neutron Detector", Located on the Internet at http://strider.lansce.lanl.gov/ins...r.sub.- experiments/boron.sub.- phosphide.html, pp. 1-2 (Jun. 26, 1997).
May et al., "A New Physical Mechanism for Soft Errors in Dynamic Memories", 1978 International Reliability Physics Symposium, 16th Annual Proceedings Reliability Physics 1978, San Diego, CA, Apr. 18-20, 1978, Sponsored by the IEEE Electron Devices Society and the IEEE Reliability Group, p. 33-40 (1978).
Crawford, Jr. Franklin D.
Hossain Tim Z.
Tiffin Don A.
Advanced Micro Devices
Chaudhuri Olik
Wille Douglas A.
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