Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-01-11
2005-01-11
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S252000
Reexamination Certificate
active
06841841
ABSTRACT:
The present neutron sensing device includes a first substantially planar array of flash memory cells, a second substantially planar array of flash memory cells having an edge adjacent an edge of the first substantially planar array of flash memory cells, and a third substantially planar array of flash memory cells having a first edge adjacent an edge adjacent an edge of the first substantially planar array of flash memory cells and a second edge adjacent an edge of the second substantially planar array of flash memory cells. The plane of the second substantially planar array of flash memory cells is at an angle relative to the plane of the first substantially planar array of flash memory cells, and the plane of the third substantially planar array of flash memory cells is at an angle relative to the plane of the first substantially planar array of flash memory cells, and is at an angle relative to the plane of the second substantially planar array of flash memory cells, in the preferred embodiment of all such angles being indicated as 90°.
REFERENCES:
patent: 5319210 (1994-06-01), Moscovitch
patent: 6075261 (2000-06-01), Hossain et al.
patent: 6765978 (2004-07-01), Kronenberg et al.
Blish II Richard C.
Likins Robert E.
Advanced Micro Devices , Inc.
Ho Tu-Tu
Nelms David
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