Metal treatment – Compositions – Heat treating
Patent
1984-09-24
1986-04-22
Roy, Upendra
Metal treatment
Compositions
Heat treating
29576B, 29576T, 148187, 148DIG128, 427 36, 427 38, 427 39, H09L 21265
Patent
active
045840288
ABSTRACT:
A p-type impurity in a silicon semiconductor structure is at least partially neutralized by exposure to atomic hydrogen. The subject method provides an excellent means of modifying the profile of the impurity. Suitable impurities include boron, aluminum, gallium and indium.
REFERENCES:
patent: 4224084 (1980-09-01), Pankove
patent: 4322253 (1982-03-01), Pankove et al.
patent: 4331486 (1982-05-01), Chenevas-Paule et al.
patent: 4339285 (1982-07-01), Pankove
patent: 4364779 (1982-12-01), Kamgar et al.
patent: 4447272 (1984-05-01), Saks
Magarino et al, Phil. Mag. 45B (1982) 285-306.
Balk et al, IBM-TDB, 10 (1968) 1277.
Ohmura et al, Phys. Stat. Solidi 15a (1973) 93.
Pankove et al., (II) Physical Review Letters, vol. 51, No. 24, pp. 2224 & 2225, Dec. 12, 1983.
Pankove et al. (III), Applied Physics Letters, vol. 35, No. 12, Dec. 15, 1980.
Dubte,acu/e/ et al., Applied Physics Letters, vol. 44, No. 4, pp. 425-427, Feb. 15, 1984.
Tarng et al., IEEE Transactions on Electron Devices, vol. ED-26, Nov. 11, 1979, pp. 1728-1734.
Pankove et al. (IV), Applied Physics Letters, vol. 34, No. 2, Jan. 15, 1979.
Hansen et al., Applied Physics Letters, vol. 44, pp. 606-608, Mar. 15, 1984.
Carlson David E.
Pankove Jacques I.
Morris B. E.
RCA Corporation
Roy Upendra
Swope R. H.
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