Neutral impurities to increase lifetime of operation of semicond

Details Neutral impurities to increase lifetime of operation of semicond Neutral impurities to increase lifetime of operation of semicond

1990-08-27

1992-07-28

Wojciechowicz, Edward J.

357 233, 357 238, 357 20, 357 63, H01L 2910

Patent

active

051344475

ABSTRACT:
In order to reduce the rate of (hot charge-carrier) degradation of semiconductor devices formed in a semiconductor body, a neutral impurity--such as germanium in silicon MOS transistors--is introduced into the body in a neighborhood of an intersection of a p-n junction with a surface of the body.

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