Neutral beam source having electromagnet used for etching...

Details Neutral beam source having electromagnet used for etching... Neutral beam source having electromagnet used for etching...

2006-06-13

2006-06-13

Hoang, Tu (Department: 2832)

Electric heating

Metal heating

By arc

C219S121430, C118S7230MA

Reexamination Certificate

active

07060931

ABSTRACT:
Disclosed is a neutral beam source used for etching a semiconductor device. The neutral beam source includes a plasma chamber having quartz provided at an outer wall thereof with an RF coil, a grid assembly, a reflective member, and an electromagnet arranged around the plasma chamber while surrounding the plasma chamber. Plasma density becomes high due to the magnetic field applied to the plasma chamber so that an amount of ion flux is increased.

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Korean Patent Abstracts (KR), abstract of G.Y. Yeom “Ion Flux Improved Ion Beam Source,” Korea 10-2002-0092482 (Dec. 12, 2002) abstract only.
Korean Patent Abstracts (KR), abstract of M.J. Jung et al. “Etch Apparatus Using Neutral Beam,” Korea 10-2003-0042958 (Jun. 2, 2003) abstract only.

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