Neuron MOSFET module structure for binary logic circuits

Data processing: artificial intelligence – Neural network – Structure

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706 26, 706 41, H03K 1923

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058060545

ABSTRACT:
A neuron MOSFET based module for use in the design and layout of binary logic circuits. In a first embodiment, the module is composed of four neuron MOSFETs arranged symmetrically to form a unit which may be combined with other such units to form more complex circuits. The MOSFETs are either n-channel or p-channel transistors. Each MOSFET has an associated floating gate and coupling region which can be selectively connected to the adjacent transistors in the module. Inputs to the module may be capacitively coupled to one or more of the coupling regions through an overlaying gate structure or by an appropriate set of doped substrate regions. Variations to the basic module structure include an embodiment formed from three neuron MOSFETs and the use of both n-channel and p-channel devices in the same module.

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Shibata, T. et al., "A Functional MOS Transistor Featuring Gate-Level Weighted Sum and Threshold Operations," IEEE Transactions on Electron Devices, vol. 39. No. 6, Jun. 1992, pp. 1444-1455.
Shibata, T. et al., "Neuron MOS Binary-Logic Integrated Circuits--Part I: Design Fundamentals and Soft-Hardware-Logic Circuit Implementation," IEEE Transactions on Electron Device, Vol. 40., No. 3, Mar. 1993, pp. 570-575.
Shibata, T. et al., "Neuron MOS Binary-Logic Integrated Circuits-Part II: Simplifying Techniques of Circuit Configuration and their Practical Applications," IEEE Transactions on Electron Devices, vol. 40, No. 5, May 1993, pp. 974-979.

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