Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1997-07-22
2000-01-04
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257 88, 257 83, 257 59, 257 72, 257316, 257295, 257319, 257325, 365145, 307201, G06G 716
Patent
active
060112956
ABSTRACT:
An active pixel image cell which includes a photosensor, active devices for control of the sensor and readout of a signal representing the intensity of light to which the sensor is exposed, and a neuron MOSFET transistor which "both amplifies the signal from the photosensor and" simulates the behavior of a human neuron. An integrated neural network and imaging array may be formed by interconnecting a group of such pixels. Digital signal processing algorithms used for image processing may be implemented at the pixel level by appropriate interconnections between the output signals from the photosensor of surrounding pixels and the neuron MOSFET.
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Shibata, T. et al., "A Functional MOS Transistor Featuring Gate-Level Weighted Sum and Threshold Operations, " IEEE Transactons on Electron Devices, pp. 144-1455, vol. 39. No. 6, Jun. 1992.
Shibata, T. et al., "Neuron MOS Binary-Logic Integrated Circuits--Part I: Design Fundamentals and Soft-Hardware-Logic Circuit Implementation," IEEE Transactions on Electron Devices, pp. 570-575, vol. 40. No. 3, Mar. 1993.
Shibata, T. et al., "Neuron MOS Binary-Logic Integrated Circuits--Part II: Simpiflying Techniques of Circuit Configuration and their Practical Applications," IEEE Transactions on Electron Devices, pp. 974-979, vol. 40. No. 5, May 1993.
Bergemont Albert
Chi Min-hwa
Merrill Richard Billings
Abraham Fetsum
Foveonics, Inc.
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