Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device
Patent
1997-06-09
2000-03-07
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
257115, 257118, 257122, 257123, 257127, 257175, H01L 2974
Patent
active
060343818
ABSTRACT:
The present invention relates to a triac network wherein each triac includes an N-type semiconductor substrate, containing a first thyristor comprised of NPNP regions and a second thyristor comprised of PNPN regions, and surrounded with a P-type deep diffusion. A P-type well contains an N-type region, on the front surface side. A first metallization corresponds to a first main electrode, a second metallization corresponds to a second main electrode, a third metallization covers the N-type region and is connected to a gate terminal, and a fourth metallization connects the P-type well to the upper surface of the deep diffusion.
REFERENCES:
patent: 3409810 (1968-11-01), Matzen, Jr.
patent: 4613884 (1986-09-01), Angerstein et al.
patent: 4939564 (1990-07-01), Asakura et al.
patent: 5345094 (1994-09-01), Usui et al.
French Search Report from French Patent Application 96 08300, filed Jun. 28, 1996.
RCA Technical Notes, vol. 2180, No. 1343, Mar. 1984, Princeton, US, pp 1-6, J.M.S. Neilson and R.A. Duclos, "Avalanche Diode Structure".
Abraham Fetsum
Galanthay Theodore E.
Morris James H.
SGS-Thomson Microelectronics S.A.
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