Netoresistance effect element

Details Netoresistance effect element Netoresistance effect element

1993-09-10

1995-05-16

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

257427, 257425, 257536, H01L 2722, H01L 2982, H01L 4300

Patent

active

054163536

ABSTRACT:
A magnetoresistance effect element is prepared by successively forming one upon the other a first magnetic layer, a P- or N-type semiconductor layer, a second magnetic layer, and a magnetization fixing layer in this order on an insulating substrate. A Schottky junction is formed between the first magnetic layer and the semiconductor layer and between the semiconductor layer and the second magnetic layer. The relative angle between the magnetization direction within the first magnetic layer and the magnetization direction within the second magnetic layer is changed depending on the intensity of the magnetic field, leading to a change in the tunnel conductance.

REFERENCES:
patent: 3525023 (1970-08-01), Pollock
patent: 4823177 (1989-04-01), Prinz et al.
patent: 4978938 (1990-12-01), Partin et al.
IBM Tech. Disc. Bull., vol. 33, No. 11, Apr. 1991, pp. 469-472 "Imaging Magnetic Domains . . . ".
"Electronic analog of the electro-optic modulator", Supriyo Datta et. al., Appl. Phys. Lett., 56(7):665-667 (1990).
"Tunneling Between Ferromagnetic Films", M. Julliere, Physics Letters, 54A(3):225-226 (1975).
"Spin-Dependent Recombination in a Silicon p-n Junction", I. Solomon, Solid State Communications, 20(3):215-217 (1976).

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